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Abstract The development of high‐quality diamond films is pivotal for driving advances in quantum technology, power electronics, and thermal management. The ion implantation and lift‐off technique has emerged as a crucial method for fabricating diamond films with controlled thickness and scalable production of large‐area diamond wafers. This study advances the understanding of critical interface dynamics during diamond epilayer growth on ion‐implanted commercial diamond substrates. Leveraging high‐resolution cross‐sectional electron microscopy and spectroscopic analyses, the direct transformation of the damaged diamond layer is revealed into a graphitic layer during epilayer overgrowth, eliminating the need for high‐temperature annealing. Raman and photoluminescence spectroscopy mappings along the side section highlight the exceptional quality and purity of the epilayer, showcasing nitrogen‐vacancy center densities comparable to electronic‐grade diamond, making it highly suitable for quantum and electronic applications. Finally, the epilayer detaches efficiently via electrochemical etching, leaving a substrate with low surface roughness that is reusable for multiple growth cycles. These results provide valuable insights into refining the ion implantation and lift‐off process, bridging critical gaps in interface evolution, and establishing a foundation for sustainable, high‐performance diamond films across diverse technological applications. 

Abstract Piezoelectricity in low‐dimensional materials and metal–semiconductor junctions has attracted recent attention. Herein, a 2D in‐plane metal–semiconductor junction made of multilayer 2H and 1T′ phases of molybdenum(IV) telluride (MoTe₂) is investigated. Strong piezoelectric response is observed using piezoresponse force microscopy at the 2H–1T′ junction, despite that the multilayers of each individual phase are weakly piezoelectric. The experimental results and density functional theory calculations suggest that the amplified piezoelectric response observed at the junction is due to the charge transfer across the semiconducting and metallic junctions resulting in the formation of dipoles and excess charge density, allowing the engineering of piezoelectric response in atomically thin materials. 

Abstract Despite decades of research, metallic corrosion remains a long‐standing challenge in many engineering applications. Specifically, designing a material that can resist corrosion both in abiotic as well as biotic environments remains elusive. Here a lightweight sulfur–selenium (S–Se) alloy is designed with high stiffness and ductility that can serve as an excellent corrosion‐resistant coating with protection efficiency of ≈99.9% for steel in a wide range of diverse environments. S–Se coated mild steel shows a corrosion rate that is 6–7 orders of magnitude lower than bare metal in abiotic (simulated seawater and sodium sulfate solution) and biotic (sulfate‐reducing bacterial medium) environments. The coating is strongly adhesive, mechanically robust, and demonstrates excellent damage/deformation recovery properties, which provide the added advantage of significantly reducing the probability of a defect being generated and sustained in the coating, thus improving its longevity. The high corrosion resistance of the alloy is attributed in diverse environments to its semicrystalline, nonporous, antimicrobial, and viscoelastic nature with superior mechanical performance, enabling it to successfully block a variety of diffusing species.